最新论文
In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信


扫描关注中国科学院半导体所

友情链接
首页 > 最新论文
Effect of as flux rate during growth interruption on the performances of ... 21-12-03
Low dark current and high bandwidth evanescent wave coupled PIN photodete... 21-11-25
Response to 14 MeV neutrons for single-crystal diamond detectors 21-11-25
Bandwidth superposition of linearly chirped microwave waveforms based on ... 21-11-25
Updated Progresses in Perovskite Solar Cells 21-11-25
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser dio... 21-11-25
1.3 mu m InGaAlAs/InP laser integrated with laterally tapered SSC in a re... 21-11-25
Mid-wave/long-wave dual-color infrared quantum cascade detector enhanced ... 21-11-25
Integrated polarization-sensitive amplification system for digital inform... 21-11-25
Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventio... 21-11-25
Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel T... 21-11-25
Four-channel directly modulated square-rectangular laser array in the O-band 21-11-25
High-performance optical noncontact controlling system based on broadband... 21-11-25
Influences of gallium and nitrogen partial pressure on step-bunching and ... 21-11-25
Oxygen-etchant-promoted synthesis of vertically aligned graphene arrays i... 21-11-25
Study of strain evolution mechanism in Ge1_xSnx materials grown by low te... 21-11-25
Spin logic operations based on magnetization switching by asymmetric spin... 21-11-25
Scattering suppression at MOS interface towards high-mobility Si-based fi... 21-11-25
Design and calculation of type-II superlattice resonant cavity-enhanced p... 21-11-18
Stabilization of thick, rhombohedral Hf0.5Zr0.5O2 epilayer on c-plane ZnO 21-11-18
共100页  首页上5页上一页5657585960下一页下5页尾页
关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号（林大北路中段） 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
友情链接
中华人民共和国科学技术部
中国科学院
中国工程院
国家自然科学基金委员会
中国科学院大学
中国科学技术大学
中国科学院科技产业网
版权所有 中国科学院半导体研究所

备案号：京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明