In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信
友情链接
A tunable Raman system based on ultrafast laser for Raman excitation prof... 21-12-30
A double quantum dot defined by top gates in a single crystalline InSb na... 21-12-30
Achieving Wide Operating Voltage Windows in Non-Carrier Injection Micro-L... 21-12-30
Reducing sputter induced stress and damage for efficient perovskite/silic... 21-12-30
Modulation of MagR magnetic properties via iron-sulfur cluster binding 21-12-30
Suppression of Surface Defects and Vibrational Coupling in GaN by a Graph... 21-12-30
Optical Control of Bulk Phonon Modes in Crystalline Solids 21-12-30
Mid-wave/long-wave dual-color infrared quantum cascade detector enhanced ... 21-12-30
First-principles study of defect control in thin-film solar cell materials 21-12-24
Metal halide perovskites for photocatalysis applications 21-12-24
Simple furan-based polymers with the self-healing function enable efficie... 21-12-24
Effect of nitrogen gas flow and growth temperature on extension of GaN la... 21-12-24
Metallic cavity nanolasers at the visible wavelength based on in situ sol... 21-12-24
Nitrogen-vacancy centers promote super-radiant maser performance 21-12-24
Research on the Performance of Nuclear Battery with SiC-Schottky and GaN-... 21-12-24
An efficient sparse pruning method for human pose estimation 21-12-24
Electrically injected double-taper semiconductor laser based on parity-ti... 21-12-24
The stimulation effects of green light on the growth, testicular developm... 21-12-24
MXene-Bonded hollow MoS2/Carbon sphere strategy for high-performance flex... 21-12-24
Interface modification of TiO2 electron transport layer with PbCl2 for pe... 21-12-24
关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明