Author(s): Xu, JK (Xu, Jian-Kai); Jiang, LJ (Jiang, Li-Juan); Wang, Q (Wang, Qian); Wang, Q (Wang, Quan); Xiao, HL (Xiao, Hong-Ling); Feng, C (Feng, Chun); Li, W (Li, Wei); Wang, XL (Wang, Xiao-Liang)

Source: CHINESE PHYSICS B Volume: 30 Issue: 11 Article Number: 118101 DOI: 10.1088/1674-1056/abff30 Published: DEC 2021

Abstract: The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been studied. By increasing the nitrogen flow whose outlet is located in the center of the MOCVD (metal-organic chemical vapor deposition) gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer, the GaN layer has extended more adequately on Si substrate. In the meantime, the surface morphology has been greatly improved. Both the AlN and GaN crystal quality uniformity has been improved. X-ray diffraction results showed that the GaN (0002) XRD FWHMs (full width at half maximum) decreased from 579 arcsec similar to 1655 arcsec to around 420 arcsec.

Accession Number: WOS:000729981600001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abff30