A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Quantum Light Source Based on Semiconductor Quantum Dots: A Review

2023-07-17
Title: Quantum Light Source Based on Semiconductor Quantum Dots: A Review

Author(s): Li, RS (Li, Rusong); Liu, FQ (Liu, Fengqi); Lu, QY (Lu, Quanyong)

Source: PHOTONICS Volume: 10  Issue: 6  Article Number: 639  DOI: 10.3390/photonics10060639  Published: JUN 2023 

Abstract: Quantum light sources that generate single photons and entangled photons have important applications in the fields of secure quantum communication and linear optical quantum computing. Self-assembled semiconductor quantum dots, also known as "artificial atoms", have discrete energy-level structures due to electronic confinement in all three spatial dimensions. It has the advantages of high stability, high brightness, deterministic, and tunable emission wavelength, and is easy to integrate into an optical microcavity with a high-quality factor, which can realize a high-performance quantum light source. In this paper, we first introduce the generation principles, properties, and applications of single-photon sources in the field of quantum information and then present implementations and development of quantum light sources in self-assembled semiconductor quantum dot materials. Finally, we conclude with an outlook on the future development of semiconductor quantum dot quantum light sources.

Accession Number: WOS:001015736900001

eISSN: 2304-6732



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明