Author(s): Luo, WX (Luo, Wei-Xia); Liu, XL (Liu, Xue-Lu); Chen, X (Chen, Xue); Wu, H (Wu, Heng); Cong, X (Cong, Xin); Lin, ML (Lin, Miao-Ling); Tan, PH (Tan, Ping-Heng)

Source: REVIEW OF SCIENTIFIC INSTRUMENTS Volume: 92 Issue: 12 Article Number: 123904 DOI: 10.1063/5.0059099 Published: DEC 1 2021

Abstract: The measurement of the Raman excitation profile (REP) is of great importance to obtain the energies of van Hove singularities and the lifetime of the excited state involved in the Raman process of semiconductors. In this Note, we develop a simple tunable Raman system based on an ultrafast laser and tunable Raman filters for REP measurement. The system is testified by measuring REP of twisted bilayer graphene, and the corresponding energy of van Hove singularity is determined.

Accession Number: WOS:000728145400006

ISSN: 0034-6748

eISSN: 1089-7623

Full Text: https://aip.scitation.org/doi/10.1063/5.0059099