High-Performance Refractive Index and Temperature Sensing Based on Toroid...
Spatiotemporal-Dependent Confinement Effect of Bubble Swarms Enables a Fr...
Preface to Special Topic on Integrated Circuits, Technologies and Applica...
An ultra-wide-angle metasurface absorber operating in the ultraviolet to ...
Reversible phase transformations between Pb nanocrystals and a viscous li...
Selective area grown photonic integrated chips for completely suppressing...
Fusing differentiable rendering and language–image contrastive learning ...
Bidirectional Voltage Regulation for Integrated Photovoltachromic Device ...
Chip-encoded high-security classical optical key distribution
Design and Optimization of EAM for Data Center Optical Interconnects
官方微信
友情链接

Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs

2024-09-12


Author(s): Zhao, Z (Zhao, Zhe); Xiong, T (Xiong, Tao); Gong, J (Gong, Jian); Liu, YY (Liu, Yue-Yang)

Source: NANOMATERIALS Volume: 14  Issue: 12  Article Number: 1038  DOI: 10.3390/nano14121038  Published Date: 2024 JUN  

Abstract: Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in the experiment still present notable reliability issues, and the underlying reason remains unclear. Here, we studied the various intrinsic defects and adsorbates in CaF2/molybdenum disulfide (MoS2) and CaF2/molybdenum disilicon tetranitride (MoSi2N4) interface systems to reveal the most active charge-trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table comparing the importance of different defects in both n-type and p-type devices is provided. Most impressively, the oxygen molecules (O-2) adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop a high-vacuum packaging process, as well as prepare high-quality 2D materials for better device performance.




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明