Author(s): Chen, YJ (Chen, Yuanjie); Huang, SY (Huang, Shaoyun); Mu, JW (Mu, Jingwei); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, Hong-Qi)

Source: CHINESE PHYSICS B Volume: 30 Issue: 12 Article Number: 128501 DOI: 10.1088/1674-1056/abff2e Published: DEC 2021

Abstract: We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.

Accession Number: WOS:000733610300001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abff2e