In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信
友情链接
Tunable Electronic Properties and Potential Applications of BSe/XS2 (X=Mo... 20-10-09
NiMoCo layered double hydroxides for electrocatalyst and supercapacitor e... 20-10-09
Full-Stokes imaging polarimetry based on a metallic metasurface 20-10-09
Observation of Strong Bulk Damping-Like Spin-Orbit Torque in Chemically D... 20-10-09
Programmable Multiple Plasmonic Resonances of Nanoparticle Superlattice f... 20-10-09
Silver-assisted growth of high-quality InAs(1-)(x)Sb(x)nanowires by molec... 20-10-09
Systematic study of vertically aligned ZnO nanowire arrays synthesized on... 20-09-24
Two-Dimensional Apodized Grating Coupler for Polarization-Independent and... 20-09-24
Differentiator-Based Photonic Instantaneous Frequency Measurement for Rad... 20-09-24
Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van ... 20-09-24
Self-reference plasmonic sensor with ultranarrow linewidths based on SPP ... 20-09-24
Dual Coordination of Ti and Pb Using Bilinkable Ligands Improves Perovski... 20-09-24
Examining the Interfacial Defect Passivation with Chlorinated Organic Sal... 20-09-24
Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin... 20-09-24
Steering Directional Light Emission and Mode Chirality through Postshapin... 20-09-24
Freestanding GaN substrate enabled by dual-stack multilayer graphene via ... 20-09-24
HCl-H2SO4-H2O solution etching behavior of InAs (100) surface 20-09-24
Controllable fabrication of lateral periodic nanoporous GaN and its enhan... 20-09-24
High power density and temperature stable vertical-cavity surface-emittin... 20-09-24
Simulation for fiber-coupled diode lasers by considering discreteness in ... 20-09-24
关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明