Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN substrate by hydrothermal method
Author(s): Zhang, S (Zhang, Shuo); Wang, YY (Wang, Yunyu); Ren, F (Ren, Fang); Feng, T (Feng, Tao); Wan, RQ (Wan, Rongqiao); Zhao, S (Zhao, Shuai); Liang, M (Liang, Meng); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan)
Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 59 Issue: 1 Article Number: 015503 DOI: 10.7567/1347-4065/ab5902 Published: JAN 1 2020
Abstract: This study presents a simple and effective way to synthesize well-aligned single-crystalline ZnO nanowires (NWs) by the hydrothermal method (HTM). The influence of growth conditions on the morphology of as-grown ZnO NWs is discussed from the chemical reaction equilibrium perspective. The height and diameter of the NWs demonstrated tunability through the optimization of the growth parameters. The ZnO NWs exhibited optimal alignment along the c-axis perpendicular to the substrate, as observed through scanning electron microscopy and X-ray diffraction. The nucleation and epitaxial growth mechanism of NWs on p-GaN has also been investigated. The conditions to obtain high-density and vertically aligned NWs were optimized as 0.03 mol l(-1) concentration, 90 degrees C temperature and 3 h time. Photoluminescence measurements revealed a strong and narrow UV emission at 380 nm. The formation of a ZnO/p-GaN heterojunction through HTM provides promising optoelectronic device applications riding on the advantages of feasibility, cost-effectiveness and non-toxicity. (C) 2019 The Japan Society of Applied Physics
Accession Number: WOS:000566406900003
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Zhang, Shuo 0000-0002-7262-8847
Zhao, Shuai 0000-0001-7171-2943
ISSN: 0021-4922
eISSN: 1347-4065
Full Text: https://iopscience.iop.org/article/10.7567/1347-4065/ab5902