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Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN substrate by hydrothermal method

2020-09-24

Author(s): Zhang, S (Zhang, Shuo); Wang, YY (Wang, Yunyu); Ren, F (Ren, Fang); Feng, T (Feng, Tao); Wan, RQ (Wan, Rongqiao); Zhao, S (Zhao, Shuai); Liang, M (Liang, Meng); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 59 Issue: 1 Article Number: 015503 DOI: 10.7567/1347-4065/ab5902 Published: JAN 1 2020

Abstract: This study presents a simple and effective way to synthesize well-aligned single-crystalline ZnO nanowires (NWs) by the hydrothermal method (HTM). The influence of growth conditions on the morphology of as-grown ZnO NWs is discussed from the chemical reaction equilibrium perspective. The height and diameter of the NWs demonstrated tunability through the optimization of the growth parameters. The ZnO NWs exhibited optimal alignment along the c-axis perpendicular to the substrate, as observed through scanning electron microscopy and X-ray diffraction. The nucleation and epitaxial growth mechanism of NWs on p-GaN has also been investigated. The conditions to obtain high-density and vertically aligned NWs were optimized as 0.03 mol l(-1) concentration, 90 degrees C temperature and 3 h time. Photoluminescence measurements revealed a strong and narrow UV emission at 380 nm. The formation of a ZnO/p-GaN heterojunction through HTM provides promising optoelectronic device applications riding on the advantages of feasibility, cost-effectiveness and non-toxicity. (C) 2019 The Japan Society of Applied Physics

Accession Number: WOS:000566406900003

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Zhang, Shuo                  0000-0002-7262-8847

Zhao, Shuai                  0000-0001-7171-2943

ISSN: 0021-4922

eISSN: 1347-4065

Full Text: https://iopscience.iop.org/article/10.7567/1347-4065/ab5902



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