Author(s): Wen, LJ (Wen, Lianjun); Liu, L (Liu, Lei); Liao, DY (Liao, Dunyuan); Zhuo, R (Zhuo, Ran); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua)

Source: NANOTECHNOLOGY Volume: 31 Issue: 46 Article Number: 465602 DOI: 10.1088/1361-6528/abac32 Published: NOV 13 2020

Abstract: InAs(1-x)Sb(x)nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the nanowires. Here, we report on the silver-assisted growth of InAs(1-x)Sb(x)nanowires by molecular-beam epitaxy for the first time. We find that the growth parameters including growth temperature, indium flux and substrate play an important role in nanowire growth. Relatively high growth temperatures and low indium fluxes can suppress the growth of non-[111]-oriented nanowires on Si (111) substrates. Vertically aligned InAs(1-x)Sb(x)nanowires with high aspect ratios can be achieved on GaAs (111)B substrates. Detailed structural studies suggest that high-quality InAs(1-x)Sb(x)nanowires can be obtained by increasing antimony content. Silver-indium alloy segregation is found in ternary alloy InAs(1-x)Sb(x)nanowires, and it plays a key role in morphological evolution of the nanowires. Our work provides useful insights into the controllable growth of high-quality III-V semiconductor nanowires.

Accession Number: WOS:000570309400001

PubMed ID: 32750681

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Reis, AlessanRSS                  0000-0001-8486-7469

Zhao, Jianhua                  0000-0003-2269-3963

Pan, Dong                  0000-0003-2067-6983

ISSN: 0957-4484

eISSN: 1361-6528

Full Text: https://iopscience.iop.org/article/10.1088/1361-6528/abac32