Author(s): Yang, LY (Yang, Liuyun); Wang, XQ (Wang, Xinqiang); Wang, T (Wang, Tao); Wang, JY (Wang, Jingyue); Zhang, WJ (Zhang, Wenjie); Quach, P (Quach, Patrick); Wang, P (Wang, Ping); Liu, F (Liu, Fang); Li, D (Li, Duo); Chen, L (Chen, Ling); Liu, SF (Liu, Shangfeng); Wei, JQ (Wei, Jiaqi); Yang, XL (Yang, Xuelin); Xu, FJ (Xu, Fujun); Tang, N (Tang, Ning); Tan, W (Tan, Wei); Zhang, J (Zhang, Jian); Ge, WK (Ge, Weikun); Wu, XS (Wu, Xiaosong); Zhang, C (Zhang, Chi); Shen, B (Shen, Bo)

Source: ADVANCED FUNCTIONAL MATERIALS Article Number: 2004450 DOI: 10.1002/adfm.202004450 Early Access Date: SEP 2020

Abstract: Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 omega sq(-1)is achieved by molecular beam epitaxy, where Shubnikov-de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two-dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three-subband occupation in the triangle quantum well for the first time, with the electron density ofn(1)=2.2x10(13) cm(-2),n(2)= 2.3x10(12)cm(-2), andn(3)=8.8x10(11)cm(-2), respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three-subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto-intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices.

Accession Number: WOS:000567546500001

ISSN: 1616-301X

eISSN: 1616-3028

Full Text: https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202004450