Author(s): Wang, XY (Wang, Xueyou); Li, J (Li, Jing); Fu, T (Fu, Ting); Chen, JX (Chen, Jingxuan); Dai, YQ (Dai, Yingqiu); Han, RB (Han, Renbo); Wang, YF (Wang, Yufei); Zheng, WH (Zheng, Wanhua)

Source: ELECTRONICS LETTERS DOI: 10.1049/ell2.12401 Early Access Date: DEC 2021

Abstract: An electrically injected semiconductor laser based on parity-time symmetry with a double-taper structure is fabricated and measured. The double-taper semiconductor lasers are defined by contact-type standard photolithography and then etched by inductively coupled plasma. The double-taper parity-time-symmetric laser can obtain an output power of more than 0.5W @0.3A, which is significantly higher than the 0.35W@0.3A of the traditional single-ridge laser. The parity-time-symmetric breaking point or exceptional point is tuned below lasing threshold to get narrower linewidth compared with traditional single-ridge lasers and double-ridge lasers, and performs single-lobe far field.

Accession Number: WOS:000730930500001

ISSN: 0013-5194

eISSN: 1350-911X

Full Text: https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12401