Author(s): Peng, LY (Peng, Liyuan); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Wang, WJ (Wang, Wenjie); Liu, ZS (Liu, Zongshun); Chen, P (Chen, Ping); Yang, J (Yang, Jing)

Source: MATERIALS TODAY COMMUNICATIONS Volume: 29 Article Number: 102923 DOI: 10.1016/j.mtcomm.2021.102923 Published: DEC 2021

Abstract: As the templates for the growth of the quantum well layer, the morphology of the quantum barrier layer is crucial. Through a cross-comparison among samples grown under different conditions, the effect of TMGa flux, NH3 flux, indium content, and temperature on morphology of InGaN quantum barrier grown by Metal-Organic Chemical Vapor Deposition (MOCVD) is studied. It is found that TMGa and NH3 flux increments are counterbalancing each other in terms of adatom diffusion. Without balanced V/III fluxes, the surface roughens either by spiral hillocks or by strong step meandering. The morphology can be quite different even under a similar V/III ratio. LED samples using the V/III unbalanced quantum barriers, compared to the V-III balanced ones, present inferior optical properties.

Accession Number: WOS:000718041200003

eISSN: 2352-4928

Full Text: https://www.sciencedirect.com/science/article/pii/S2352492821009090?via%3Dihub