Author(s): Li, YC (Li, Yucai); Zhang, N (Zhang, Nan); Wang, KY (Wang, Kaiyou)

Source: SCIENCE CHINA-INFORMATION SCIENCES Volume: 65 Issue: 2 Article Number: 122404 DOI: 10.1007/s11432-020-3246-8 Published: FEB 2022

Abstract: Spintronic devices based on spin orbit torques (SOT) exhibit advantages in low power consumption, high speed, reconfigurability, and high endurance, which offers the prospect of in-memory computing based on spin logic devices. By designing a local spin current gradient, the magnetization can be switched deterministically by asymmetric spin currents without external magnetic field using micromagnetic simulations, where an additional out of plane effective field can be generated by the spin gradient. Through capping half of the Pt/Co/Pt SOT devices with Pt strip, we demonstrate the field-free deterministic current-induced magnetization switching experimentally. Finally, we design AND, NAND, OR, and NOR Boolean logic gates based on these devices, which could be used as building blocks for programmable and stateful logic operations.

Accession Number: WOS:000717989400001

ISSN: 1674-733X

eISSN: 1869-1919

Full Text: https://link.springer.com/article/10.1007%2Fs11432-020-3246-8