Author(s): Yan, LY (Yan, Luyi); Liang, F (Liang, Feng); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Jiang, DS (Jiang, Desheng); Zhao, DG (Zhao, Degang)

Source: NANOMATERIALS Volume: 14 Issue: 8  Article Number: 703  DOI: 10.3390/nano14080703  Published Date: 2024 APR 

Abstract: This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.

Accession Number: WOS:001210083500001

PubMed ID: 38668197

eISSN: 2079-4991