Author(s): Gao, YF (Gao, Yuanfei); Lai, JM (Lai, Jia-Min); Li, ZY (Li, Zhen-Yao); Tan, PH (Tan, Ping-Heng); Shan, CX (Shan, Chong-Xin); Zhang, J (Zhang, Jun)

Source: APPLIED PHYSICS LETTERS Volume: 124 Issue: 9  Article Number: 091101  DOI: 10.1063/5.0184331  Published Date: 2024 FEB 26 

Abstract: The accurate measurement of thermal conductivity of diamond below 10 K has always been a challenge, mainly due to significant error in temperature sensing using the thermocouple method. Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects. Here, we observed the dynamic redshift and broadening of zero phonon line of silicon-vacancy (SiV-) centers at 4 K. Utilizing the intrinsic temperature response of the fine structure spectra of SiV- as a probe, we confirmed that laser heating effect appears and the temperature rising results from high defect concentration. By simulating the thermal diffusion process, we have estimated the thermal conductivity of around 1 W/(m K), which is a two-order magnitude lower than that of single-crystal diamond. Our results provide a feasible scheme for all-optical non-contact temperature sensing and help to solve the problem of accurate measurement of thermal conductivity at cryogenic temperatures.

Accession Number: WOS:001177275400013

ISSN: 0003-6951

eISSN: 1077-3118