Author(s): Shi, JM (Shi, Jianmei); Yang, CA (Yang, Chengao); Wang, TF (Wang, Tianfang); Chen, YH (Chen, Yihang); Yu, HG (Yu, Hongguang); Zhang, Y (Zhang, Yu); Wu, DH (Wu, Donghai); Xu, YQ (Xu, Yingqiang); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: APPLIED PHYSICS LETTERS Volume: 123 Issue: 12  Article Number: 121105  DOI: 10.1063/5.0167510  Published Date: 2023 SEP 18 

Abstract: Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly confirmed by optical field simulations and complete device measurements. The optimized device shows an enhanced continuous-wave output power in exceeding of 1.3 W at room temperature, along with a reduced threshold current and increased peak power conversion efficiency. Moreover, it exhibits an ultra-stable lateral far field with a 45.6% reduction in divergence and a notable 75.5% improvement in current dependence compared with conventional BA diode lasers. The minimum divergence is as low as 5.64(degrees) for full width at half maximum definition.

Accession Number: WOS:001136847900044

Author Identifiers:

Author Web of Science ResearcherID     ORCID Number

Yang, Chengao AAX-6086-2020   0000-0003-4426-6807

wu, donghai AFS-3472-2022  

Shi, Jianmei       0009-0000-6305-8996

ISSN: 0003-6951

eISSN: 1077-3118