3-D Gravity Anomaly Inversion for Imaging Salt Structures, With Applicati...
Full-Stokes polarization photodetector based on the hexagonal lattice chi...
Multiple k-Point Nonadiabatic Molecular Dynamics for Ultrafast Excitation...
Research on the fabrication of high-power semiconductor lasers by impurit...
Low-loss silica-based 90 deg optical hybrid in c band based on 4 x 4 mult...
Ultra-broad bandwidth array waveguide grating for high-speed backbone net...
Optical time domain reflectometry based on a self-chaotic circular-sided ...
 ICGNet: An intensity-controllable generation network based on covering ...
Dual-polarization near-infrared narrow-band unidirectional nonreciprocal ...
Design and Optimization of a High-Efficiency 3D Multi-Tip Edge Coupler Ba...
官方微信
友情链接

High-performance TM-pass polarizer based on anti-symmetric Bragg gratings

2024-04-01


Author(s): Liu, WZ (Liu, Weizhuo); Fu, X (Fu, Xin); Cheng, C (Cheng, Chuang); Yang, L (Yang, Lin)

Source: OPTICS EXPRESSVolume: 31Issue: 26  DOI: 10.1364/OE.509405  Published Date: 2023 DEC 18

Abstract: We present an all-silicon transverse-magnetic-pass (TM-pass) polarizer based on anti-symmetric Bragg gratings. We obtain wide operation bandwidth and high polarization extinction ratio (PER) by maximizing the coupling between the forward TE0 mode and the backward TE1 mode through the reduction of the bridge element width. In the meantime, low insertion loss (IL) is acquired with long tapered structures and the exclusion of the center grating part. Experimental results indicate IL below 0.74 dB and PER over 40 dB covering the wavelength ranges of 1275-1360 nm and 1500-1523 nm, while the average IL within these ranges is as low as 0.27 dB. Additionally, simulation results suggest that the performance can be further improved by introducing chirp in the period of Bragg gratings, thus achieving IL < 0.11 dB and PER > 60 dB over a wide range of 280 nm (1290-1570 nm).

Accession Number: WOS:001171702100009

ISSN: 1094-4087




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明