Author(s): Bi, ZY (Bi, Zhengyu); Zhang, YP (Zhang, Yupeng); Zhang, YF (Zhang, Yongfeng); Liu, XY (Liu, Xinyan); Ma, Y (Ma, Yan); Li, X (Li, Xin); Liu, CX (Liu, Caixia); Chen, Y (Chen, Yu); Zhou, JR (Zhou, Jingran); Ruan, SP (Ruan, Shengping)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 170  Article Number: 107973  DOI: 10.1016/j.mssp.2023.107973  Early Access Date: NOV 2023  

Abstract: Doping and heterojunction manufacturing processes are widely employed techniques for modifying the energy band of wide band gap semiconductors. In this work, the sol-gel method was employed to introduce indium (In) into Ga2O3, leading to the formation of the GaInO (GIO) thin film, which was subsequently combined with SrTiO3 (STO) to form the heterojunction. The heterojunction was utilized for the fabrication of metalsemiconductor-metal (MSM) structured ultraviolet (UV) photodetectors (PDs). The existence of a built-in electric field (Ebi) generated by the heterojunction at the contact interface of GIO and STO can diminish the density of majority carriers in dark conditions, consequently leading to a decrease in the dark current. The photo-to-dark suppression ratio of GIO/STO exceeds three orders of magnitude (1.157 x 103), and the dark current of the composite GIO/STO MSM UVPDs (0.178 nA) is one order of magnitude lower than that of the individual GIO (4.028 nA) at 5V bias. Additionally, the Ebi may accelerate the exciton separation for photo-generated exciton, thereby accelerating the response speed. The GIO/STO device demonstrates a shorter rise time of 1.21 s and a decay time of 0.42 s. The utilization of both energy band modification methods offers promising prospects for the application of GIO/STO MSM UVPDs.

Accession Number: WOS:001166915800001

ISSN: 1369-8001

eISSN: 1873-4081