Author(s): Duo, Y (Duo, Yiwei); Yin, Y (Yin, Yu); He, R (He, Rui); Chen, RF (Chen, Renfeng); Song, YJ (Song, Yijian); Long, H (Long, Hao); Wang, JX (Wang, Junxi); Wei, TB (Wei, Tongbo)

Source: OPTICS LETTERS Volume: 49 Issue: 2  DOI: 10.1364/OL.512307  Published: JAN 15 2024 

Abstract: We demonstrate the InGaN/GaN-based monolithic micro pyramid white (MPW) vertical LED (VLED) grown on (-201)-oriented beta-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10-11) side walls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on beta-Ga2O3 has great potential for highly efficient phosphor-free white light emission. (c) 2024 Optica Publishing Group

Accession Number: WOS:001165116700006

PubMed ID: 38194541

ISSN: 0146-9592

eISSN: 1539-4794