Author(s): Chen, RL (Chen, Ruolin); Li, XF (Li, Xuefei); Du, H (Du, Hao); Yan, JF (Yan, Jianfeng); Kong, CT (Kong, Chongtao); Liu, GP (Liu, Guipeng); Lu, GJ (Lu, Guangjun); Zhang, X (Zhang, Xin); Song, SX (Song, Shuxiang); Zhang, XH (Zhang, Xinhui); Liu, LS (Liu, Linsheng)

Source: NANOMATERIALS Volume: 14 Issue: 3  Article Number: 294  DOI: 10.3390/nano14030294  Published: FEB 2024 

Abstract: The low-temperature-grown InGaAs (LT-InGaAs) photoconductive antenna has received great attention for the development of highly compact and integrated cheap THz sources. However, the performance of the LT-InGaAs photoconductive antenna is limited by its low resistivity and mobility. The generated radiated power is much weaker compared to the low-temperature-grown GaAs-based photoconductive antennas. This is mainly caused by the low abundance of excess As in LT-InGaAs with the conventional growth mode, which inevitably gives rise to the formation of As precipitate and alloy scattering after annealing. In this paper, the migration-enhanced molecular beam epitaxy technique is developed to grow high-quality (InAs)(m)/(GaAs)(n) short-period superlattices with a sharp interface instead of InGaAs on InP substrate. The improved electron mobility and resistivity at room temperature (RT) are found to be 843 cm(2)/(V center dot s) and 1648 ohm/sq, respectively, for the (InAs)(m)/(GaAs)(n) short-period superlattice. The band-edge photo-excited carrier lifetime is determined to be similar to 1.2 ps at RT. The calculated photocurrent intensity, obtained by solving the Maxwell wave equation and the coupled drift-diffusion/Poisson equation using the finite element method, is in good agreement with previously reported results. This work may provide a new approach for the material growth towards high-performance THz photoconductive antennas with high radiation power.

Accession Number: WOS:001161091300001

PubMed ID: 38334565

Author Identifiers:

Author Web of Science ResearcherID     ORCID Number

Zhang, Xin C-4163-2014      0000-0002-1450-2525

ZHANG, XINHUI       0000-0003-0059-6599

Liu, Linsheng       0000-0001-7971-7386

eISSN: 2079-4991