Xue, Ting; Huang, Jianliang; Zhang, Yanhua; Ma, Wenquan Source: IEEE Journal of Quantum Electronics, p 1-1, 2024;

Abstract:

We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is 4.18 μm, and the shot noise limited detectivity D* is 1.57×10 cm·Hz/W for the peak wavelength of 3.79 μm. At 300 K, the 50% cutoff wavelength is 4.70 μm, and the D* is 4.87×10 cm·Hz/W for the peak response wavelength of 4.15 μm. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160-300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.

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