Zhou, Yueguang; Yang, Yuhui; Wang, Yujing; Koulas-Simos, Aris; C Palekar, Chirag; Limame, Imad; Li, Shulun; Liu, Hanqing; Ni, Haiqiao; Niu, Zhichuan; Yvind, Kresten; Gregersen, Niels; Pu, Minhao; Reitzenstein, Stephan Source: Materials for Quantum Technology, v 4, n 2, June 1, 2024; E-ISSN: 26334356; DOI: 10.1088/2633-4356/ad5823; Article number: 025403; Publisher: Institute of Physics

Author affiliation:

DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, Kgs. Lyngby; 2800, Denmark

Institute of Solid State Physics, Technische Universität Berlin, Berlin; 10623, Germany

State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

Abstract:

This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.