He, Rui; Song, Yijian; Liu, Naixin; Chen, Renfeng; Wu, Jin; Wang, Yufeng; Hu, Qiang; Chen, Xiongbin; Wang, Junxi; Li, Jinmin; Wei, Tongbo Source: APL Photonics, v 9, n 7, July 1, 2024; E-ISSN: 23780967; DOI: 10.1063/5.0206657; Article number: 076104; Publisher: American Institute of Physics

Author affiliation:

Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

Jihua Lab, Foshan; 528200, China

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing; 101408, China

Abstract:

The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices-electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 10, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 10 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.