Zhang, Siyu; Xia, Zhengchang; Meng, Junhua; Cheng, Yong; Jiang, Ji; Yin, Zhigang; Zhang, Xingwang Source: Nano Letters, 2024; ISSN: 15306984, E-ISSN: 15306992; DOI: 10.1021/acs.nanolett.4c02067; Publisher: American Chemical Society

Articles not published yet, but available online Article in Press

Author affiliation:

Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing; 100124, China

Abstract:

Two-dimensional (2D) InSe and PtTe2 have drawn extensive attention due to their intriguing properties. However, the InSe monolayer is an indirect bandgap semiconductor with a low hole mobility. van der Waals (vdW) heterostructures produce interesting electronic and optoelectronic properties beyond the existing 2D materials and endow totally new device functions. Herein, we theoretically investigated the electronic structures, transport behaviors, and electric field tuning effects of the InSe/PtTe2 vdW heterostructures. The calculated results show that the direct bandgap type-II vdW heterostructures can be realized by regulating the stacking configurations of heterostructures. By applying an external electric field, the band alignment and bandgap of the heterostructures can also be flexibly modulated. Particularly, the hole mobility of the heterostructures is improved by 2 orders of magnitude to ∼10 cm V s, which overcomes the intrinsic disadvantage of the InSe monolayer. The InSe/PtTe2 vdW heterostructures have great potential applications in developing novel optoelectronic devices.