Zhang, Yuheng; Yang, Jing; Liang, Feng; Liu, Zongshun; Hou, Yufei; Liu, Bing; Zheng, Fu; Liu, Xuefeng; Zhao, Degang

Source: Semiconductor Science and Technology, v 39, n 7, July 2024; ISSN: 02681242, E-ISSN: 13616641; DOI: 10.1088/1361-6641/ad5581; Article number: 075020; Publisher: Institute of Physics

Author affiliation:

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China

Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China

Abstract:

The relationship between stress and dislocation density in MOCVD epitaxial AlN was studied. It has been found that the aluminum nitride (AlN) epitaxial layer generates tensile stress when the crystal islands are merged. By controlling the size and density of crystal islands at the end of 3D growth, the tensile stress generated during epitaxy can be effectively reduced. Mechanical calculations show that there is a linear relationship between the edge thread dislocations density of AlN and the tensile stress during growth. By controlling the stress during AlN growth below 0.1 Gpa, a high-quality AlN sample with an edge thread dislocation density of 6.31 × 10 cm was obtained.