Li, Yunkai; Zhao, Siqi; Wei, Moyu; Jiao, Jingyi; Yan, Guoguo; Liu, Xingfang

Source: Vacuum, v 227, September 2024; ISSN: 0042207X; DOI: 10.1016/j.vacuum.2024.113418; Article number: 113418; Publisher: Elsevier Ltd

Author affiliation:

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

Abstract:

An experimental investigation into the deposition and oxidation of Si on 4H–SiC was conducted, leading to the successful synthesis and detailed characterization of a SiO2/P-type Si/N-type 4H–SiC triple-layer structure. Utilizing a common SiC vapor-phase epitaxy furnace, Si layers were grown on 4H–SiC substrates to investigate the effect of temperature. It was found that Si layers grown at 800 °C exhibited high material quality and an appropriate growth rate. Subsequently, they are oxidized at various temperatures, characterized to explore the quality of the oxide layers and tested to obtain critical information of the oxide layers and the conductivity type of the Si layers through Capacitance-Voltage (C–V) testing, identifying that oxidation at 1200 °C yielded the best oxide layers and interface quality.