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Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

2024-07-12


Li, Jian; Jiang, Chen; Liu, Hao; Zhang, Yang; Zhai, Hao; Wei, Xin; Wang, Qi; Wu, Gang; Li, Chuanchuan; Ren, Xiaomin

Source: Advanced Photonics Research, 2024; E-ISSN: 26999293; DOI: 10.1002/adpr.202300348; Publisher: John Wiley and Sons Inc

Articles not published yet, but available online Article in Press

Author affiliation:

Institute of Semiconductors, Chinese Academy of Science, Beijing; 100083, China

College of Materials Science and Opto-Electronic Technology, University of Academy of Sciences, Beijing; 100049, China

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing; 100876, China

BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing; 100876, China

Abstract:

A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 10 cm. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser.





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