Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation
Mapping the Antiparallel Aligned Stripe Domain Rotation by Microwave Exci...
Design and Simulation of Silicon-Based Tunable External Cavity Diode Lase...
 US2Mask: Image-to-mask generation learning via a conditional GAN for ca...
High-Performance All-Dielectric Metasurface for Quadruple Fano Resonance-...
Polarization Characteristics of Vertical Cavity Surface Emitting Laser wi...
Comparative Transcriptome Analysis Reveals the Light Spectra Affect the G...
Gate-compatible circuit quantum electrodynamics in a three-dimensional ca...
Monolithic integration of deep ultraviolet and visible light-emitting dio...
Enhanced linear polarization of GaN-based Micro-LED via rational chip sid...
官方微信
友情链接

Research on ultrawideband photodetector module based on parasitic parameter regulation    (Open Access)

2024-04-01


Chen, Man; Zhao, Zeping; Shen, Zheyuan; Feng, Haolei; Wang, Hanyu; Hu, Zijian; Liu, Jianguo Source: Optics Express, v 32, n 6, p 10230-10240, March 11, 2024;

Abstract:

A four-channel ultrawideband photodetector (PD) module with a size of 26.1 mm × 33.2 mm × 8.5 mm has been demonstrated in our laboratory. We propose a method to improve the bandwidth of the PD module based on compensating parasitic parameters by dual resistance regulation on the P and N terminals of the PD chip. A small signal equivalent circuit model with package matching network is established for the PD module, and the effectiveness of the proposed method and the accuracy of the model are verified by experiments. A four-channel photodetector module with a 3 dB bandwidth of up to 67 GHz is fabricated by using photodetector chips with 3 dB bandwidths of 46 GHz, and the responsivity is up to 0.50A/W.

© 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. (22 refs.)




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明