Huang, Qinxing; Zheng, Jun; Zhu, Yupeng; Liu, Xiangquan; Liu, Zhipeng; Yang, Yazhou; Cui, Jinlai; Liu, Zhi; Zuo, Yuhua; Cheng, Buwen Source: Optics Letters, v 49, n 5, p 1365-1368, March 1, 2024;

Abstract:

In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting growth (RMG) method. Taking advantages of the defect-free GeSn strips, GeSn PDs with 5.3%Sn content have lowdark current and high responsivities, which are about 0.48, 0.47, and 0.24 A/W for wavelengths of 1550, 1630, and 2000 nm, respectively. The radio frequency of the lateral GeSn PDs was also studied and a 3 dB bandwidth of about 3.8 GHz was achieved. These results indicate that the GeSn grown by the rapid melting growth method is capable of fabricating high-performance Si-based optoelectronic devices.

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