A miniprotein receptor electrochemical biosensor chip based on quantum dots
 Optimizing auxiliary laser heating for Kerr soliton microcomb generation
Assessing the Alignment Accuracy of State-of-the-Art Deterministic Fabric...
Helicity-dependent photocurrent of topological surface states in the intr...
Noncritical birefringence phase-matched second harmonic generation in a l...
A high-performance multi-wavelength optical switch based on multiple Fano...
A Flexible Bimodal Self-Powered Optoelectronic Skin for Comprehensive Per...
Strain-engineered magnon states in two-dimensional ferromagnetic monolaye...
Compositionally modulated perpendicular magnetic anisotropy in tetragonal...
Terahertz broadband tunable multifunctional metasurface based on VO2  ...
官方微信
友情链接

A low power BJT-based CMOS temperature sensor using dynamic-distributing-bias circuit    (Open Access)

2024-03-21


Zhai, Shichong; Li, Wenchang; Zhang, Tianyi; Liu, Jian Source: IEICE Electronics Express, v 21, n 4, February 2024;

Abstract:

A low power dynamic-distributing-bias CMOS temperature sensor is presented for temperature-sensing RFID tag. To reduce the chip area and power consumption, we propose a new hybrid PTAT/REF current generator. A new current-mode readout scheme is devised, which is dedicated to improve the dynamic range utilization of ADC and further reduce the power consumption. Fabricated in 0.153 µm CMOS process, the sensor shows a measured inaccuracy of 0.6C to +0.8C from 40C to 125C. This performance is obtained by using precision and nonlinearity compensation techniques such as VBE trimming, ratio-metric curvature correction, chopping and dynamic element matching (DEM). The sensor has low power consumption of 2.21 µW under a 1.6 V supply and occupies an area of 0.07 mm

Copyright © 2024 The Institute of Electronics, Information and Communication Engineers. (31 refs.)




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明