Author(s): Sun, D (Sun, Duo); Wang, QL (Wang, QiLin); Wang, W (Wang, Wei); Chen, Y (Chen, Yu); Ruan, SP (Ruan, Shengping)

Source: ACS APPLIED NANO MATERIALS DOI: 10.1021/acsanm.3c01484  Early Access Date: JUN 2023  

Abstract: The directional modulation of metal oxide semiconductors(MOSs)can be effective in developing high-performance gas-sensing materials.Herein, we propose an efficient strategy by modifying ZnWO4 on In2O3 to achieve controllable modulationof oxygen vacancies and energy band structures in ZnWO4/In2O3 heterostructures. The sensor based onoptimized ZnWO4/In2O3 exhibits significantlyenhanced performance to detect triethylamine, including a lower operatingtemperature (100 degrees C), a higher responsivity (R-a/R-g = 221.2 for 100 ppm), and a lower detection limit (500 ppb).In addition, the fabricated sensor exhibits faster response and goodselectivity. The improved gas-sensing performance could be attributedto the acid-base interaction between triethylamine gas andZnWO(4), the formation of heterojunctions, and the increaseof oxygen vacancies to achieve a synergistic modulation of the chemicaland energy band structures. It is anticipated that our current investigationcould offer insights and a useful strategy for triethylamine detection.

Accession Number: WOS:001002556500001

eISSN: 2574-0970