High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer
2023-06-19
Author(s): Chen, YH (Chen, Yihang); Yang, CA (Yang, Chengao); Wang, TF (Wang, Tianfang); Yu, HG (Yu, Hongguang); Shi, JM (Shi, Jianmei); Su, XB (Su, Xiangbin); Zhang, Y (Zhang, Yu); Zhao, YW (Zhao, Youwen); Tong, CZ (Tong, Cunzhu); Wu, DH (Wu, Donghai); Xu, YQ (Xu, Yingqiang); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)
Source: APPLIED SCIENCES-BASEL Volume: 13 Issue: 9 Article Number: 5506 DOI: 10.3390/app13095506 Published: APR 28 2023
Abstract: We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 ?. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a
Record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40?, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer.
Accession Number: WOS:000987272700001
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
niu, zhi chuan 0000-0002-9566-6635
eISSN: 2076-3417
