High-Power Semiconductor Laser Fabricated by Standard Photolithography for Direct Modulation
Author(s): Li, J (Li, Jing); Wang, XY (Wang, Xueyou); Xu, YB (Xu, Yuanbo); Dong, FX (Dong, Fengxin); Du, FL (Du, Fangling); Wang, HL (Wang, Hailing); Zheng, WH (Zheng, Wanhua)
Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 35 Issue: 6 Pages: 289-292 DOI: 10.1109/LPT.2023.3240413 Published: MAR 15 2023
Abstract: High-power semiconductor laser with an integrated master oscillator power amplifier (MOPA) based on the surface-slotted structure is demonstrated. The lasing wavelength of 1.5 mu m is achieved by using a group of micron-level slots fabricated by standard photolithography. The laser exhibits continuous-wave output power of up to 225 mW in the single mode operation at room temperature. At the maximum output power, the modulation bandwidth is larger than 7 GHz, demonstrating the excellent performance of the MOPA based on the surface-slotted structure.
Accession Number: WOS:000934984300002
ISSN: 1041-1135
eISSN: 1941-0174
