Author(s): Sun, YQ (Sun, Yongqiang); Yin, R (Yin, Ran); Zhang, JC (Zhang, Jinchuan); Liu, JQ (Liu, Junqi); Fei, T (Fei, Teng); Li, K (Li, Kun); Guo, K (Guo, Kai); Jia, ZW (Jia, Zhiwei); Liu, SM (Liu, Shuman); Lu, QY (Lu, Quanyong); Zhuo, N (Zhuo, Ning); Wang, LJ (Wang, Lijun); Liu, FQ (Liu, Fengqi); Zhai, SQ (Zhai, Shenqiang)

Source: OPTICS EXPRESS Volume: 30 Issue: 21 Pages: 37272-37280 DOI: 10.1364/OE.469573 Published: OCT 10 2022

Abstract: We demonstrate a high power InP-based quantum cascade laser (QCL) (lambda similar to 9 mu m) with high characteristic temperature grown by metalorganic chemical vapor deposition (MOCVD) in this article. A 4-mm-long cavity length, 10.5-mu m-wide ridge QCL with high-reflection (HR) coating demonstrates a maximum pulsed peak power of 1.55 W and continuous-wave (CW) output power of 1.02W at 293 K. The pulsed threshold current density of the device is as low as 1.52 kA/cm(2). The active region adopted a dual-upper-state (DAU) and multiple-lower-state (MS) design and it shows a wide electroluminescence (EL) spectrum with 466 cm(-1) wide full-width at half maximum (FWHM). In addition, the device performance is insensitive to the temperature change since the threshold-cur rent characteristic temperature coefficient, T-0, is as high as 228 K, and slope-efficiency characteristic temperature coefficient, T-1, is as high as 680 K, over the heatsink-temperature range of 293K to 353 K. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Accession Number: WOS:000917277400007

PubMed ID: 36258318

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Fei, Teng                  0000-0001-8854-152X

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-30-21-37272&id=507130