Author(s): Fang, JZ (Fang, Jing-Zhi); Cui, HN (Cui, Hao-Nan); Wang, S (Wang, Shuo); Lu, JD (Lu, Jing-Di); Zhu, GY (Zhu, Guang-Yu); Liu, XJ (Liu, Xin-Jie); Qin, MS (Qin, Mao-Sen); Wang, JK (Wang, Jian-Kun); Wu, ZN (Wu, Ze-Nan); Wu, YF (Wu, Yan-Fei); Wang, SG (Wang, Shou-Guo); Zhang, ZS (Zhang, Zhen-Sheng); Wei, ZM (Wei, Zhongming); Zhang, JX (Zhang, Jinxing); Lin, BC (Lin, Ben-Chuan); Liao, ZM (Liao, Zhi-Min); Yu, DP (Yu, Dapeng)

Source: PHYSICAL REVIEW B Volume: 107 Issue: 4 Article Number: L041107 DOI: 10.1103/PhysRevB.107.L041107 Published: JAN 19 2023

Abstract: The exchange bias effect, namely the horizontal shift in the magnetic hysteretic loop, is known as a fundamentally and technologically important property of magnetic systems. Though the exchange bias effect has been widely observed in normal magnetic heterostructure, it is desirable to raise such pinning coupling in topology-based multilayer structure. Furthermore, the exchange bias effect was theoretically proposed to be able to further open the surface magnetization gap in the recently discovered intrinsic magnetic topological insulator MnBi2Te4. Such an exchange interaction can be ensured and programmed in the heterojunction, or applied to spintronics. Here we report the electrically tunable exchange bias in the van der Waals MnBi2Te4/Cr2Ge2Te6 heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the band gap. Moreover, the exchange bias is experienced by net ferromagnetic (FM) odd-layers MnBi2Te4 rather than the pure FM insulator Cr2Ge2Te6. Accompanied by nonlocal signal, an unfamiliar antisymmetric peak endows a domain-related structure within interface of the heterostructure. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible application of spintronics or high-Tc quantum anomalous Hall effect.

Accession Number: WOS:000925846100001

ISSN: 2469-9950

eISSN: 2469-9969

Full Text: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.107.L041107