Author(s): Li, WJ (Li, Weijie); Liu, ZH (Liu, Zhihai); Mu, JW (Mu, Jingwei); Luo, Y (Luo, Yi); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, H. Q.)

Source: ADVANCED QUANTUM TECHNOLOGIES DOI: 10.1002/qute.202200158 Early Access Date: FEB 2023

Abstract: A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The charge stability diagram for a capacitively coupled, parallel double-QD formed from a QD in the TQD and the sensor QD show a visible capacitance coupling between the TQD and the sensor QD, indicating a good sensitivity of the charge sensor. The charge stability diagrams of the TQD are measured by the charge sensor and the global features in the charge stability diagrams are well reproduced by the simultaneous direct transport measurements and by the simulation made based on an effective capacitance network model. The complex charge stability diagrams of the TQD are measured in detail with the integrated charge sensor in an energetically degenerate region, where all the three QDs are on or nearly on resonance, and the formations of quadruple points and of all possible eight charge states are observed. In addition, the operation of the TQD as a quantum cellular automata is demonstrated and discussed.

Accession Number: WOS:000931830700001

eISSN: 2511-9044

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/qute.202200158