Author(s): Huang, QX (Huang, Qinxing); Liu, XQ (Liu, Xiangquan); Zheng, J (Zheng, Jun); Yang, YZ (Yang, YaZhou); Zhang, DD (Zhang, Diandian); Pang, YQ (Pang, Yaqing); Cui, JL (Cui, Jinlai); Liu, Z (Liu, Zhi); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: JOURNAL OF LUMINESCENCE Volume: 255 Article Number: 119623 DOI: 10.1016/j.jlumin.2022.119623 Early Access Date: DEC 2022 Published: MAR 2023

Abstract: In this work, single crystalline GeSn on insulator (GSOI) were grown by rapid melting growth (RMG). The Sn content distribution along the strip was investigated, reaching to 7.8% near the end of the strip. The GeSn strip had high quality with no threading dislocations, as revealed by cross-sectional transmission electron microscopy (XTEM). Photoluminescence (PL) measurements along the strip were performed to check the indirect-direct bandgap transition Sn content of GeSn alloys. It was found the integrated PL intensity increased about 6.6 times for Sn content 0.86%-7.8%. For GeSn with Sn content 6.1%, the temperature-dependent PL shows that the energy difference between direct Gamma-Gamma valley and indirect L-Gamma valley decreases due to the bandgap narrowing (BGN) effect, and the direct band transition gradually dominates the PL spectra as temperature increases. The temperature-dependent PL spectra have only one peak for GeSn with Sn content 7.8%, suggesting the direct bandgap property. These results indicate that GeSn grown by RMG is very promising for fabricating efficient Si based light sources.

Accession Number: WOS:000921185100001

ISSN: 0022-2313

eISSN: 1872-7883

Full Text: https://www.sciencedirect.com/science/article/pii/S0022231322008985?via%3Dihub