Author(s): An, YL (An, Yunlai); Zhang, WT (Zhang, Wenting); Tang, XL (Tang, Xinling); Niu, XP (Niu, Xiping); Wang, L (Wang, Liang); Yang, XL (Yang, Xiaolei); Shen, ZW (Shen, Zhanwei); Sun, JM (Sun, Junmin); Sang, L (Sang, Ling); Liu, R (Liu, Rui); Du, ZC (Du, Zechen); Luo, WX (Luo, Weixia); Li, L (Li, Ling); Chen, ZY (Chen, Zhongyuan); Wei, XG (Wei, Xiaoguang); Yang, F (Yang, Fei)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 605 Article Number: 127083 DOI: 10.1016/j.jcrysgro.2023.127083 Early Access Date: JAN 2023 Published: MAR 1 2023

Abstract: The analysis of bipolar degradation in 18 kV SiC IGBT with constant voltage stress was studied. Its fabrication process as well as testing conditions of IGBT device structure were described. The output characteristics were used for analysis in testing of the degraded devices. In addition, it was revealed that the device with no defects on the surface of the epitaxial layer suffers from unexpected degradation under low voltage stress, while the device with poor performance was completely degraded under high voltage stress. The research results will be a good guidance for controlling defects of high-voltage devices in the process of substrate, epitaxy and chip fabrication.

Accession Number: WOS:000922170200001

ISSN: 0022-0248

eISSN: 1873-5002

Full Text: https://www.sciencedirect.com/science/article/pii/S002202482300009X?via%3Dihub