Author(s): Huang, JD (Huang, Jidong); Tian, Y (Tian, Yan); Cheng, Y (Cheng, Yong); Li, XX (Li, Xingxing); Zhang, SY (Zhang, Siyu); Jiang, J (Jiang, Ji); Chen, JR (Chen, Jingren); Wang, GK (Wang, Gaokai); Li, JZ (Li, Jingzhen); Yin, ZG (Yin, Zhigang); Zhang, XW (Zhang, Xingwang)

Source: SCIENCE CHINA-MATERIALS Article Number: s40843-022-2297-1 DOI: 10.1007/s40843-022-2297-1 Early Access Date: JAN 2023

Abstract: Bandgap engineering of transition metal dichalcogenides (TMDs) is significant for broadening their applications in electronics and optoelectronics devices. Herein, we report the new epitaxial growth of large-area uniform ZrS2(1-x)Se2x alloy films with fully tunable composition on sapphire substrates via a facile single-step chemical vapor deposition method. The ZrS2(1-x)Se2x alloys exhibit good single crystallinity and epitaxial quality, as well as uniform elemental distribution, and the epitaxial relationship with the substrate is determined to be ZrS2(1-x)Se2x (0001)[10-10]parallel to sapphire (0001)[11-20]. The bandgap of ZrS2(1-x)Se2x alloy exhibits a pronounced bowing behavior with continuously tunable bandgaps from 1.86 to 1.15 eV, depending on the Se composition. The ZrS2(1-x)Se2x-based photodetectors demonstrate a sensitive photoresponse to visible light with a fast response time of similar to 100 mu s, and their performances are significantly improved as the Se composition decreases. This work provides an efficient way to synthesize ZrS2(1-x)Se2x alloys with fully tunable bandgaps, providing great flexibility in designing TMD-based optoelectronic devices.

Accession Number: WOS:000921251000004

ISSN: 2095-8226

eISSN: 2199-4501

Full Text: https://link.springer.com/article/10.1007/s40843-022-2297-1