Author(s): Zhao, SQ (Zhao, Siqi); Chen, JH (Chen, Junhong); Yang, SY (Yang, Shangyu); Yan, GG (Yan, Guoguo); Shen, ZW (Shen, Zhanwei); Zhao, WS (Zhao, Wanshun); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Sun, GS (Sun, Guosheng); Zeng, YP (Zeng, Yiping)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 603 Article Number: 127008 DOI: 10.1016/j.jcrysgro.2022.127008 Published: FEB 1 2023

Abstract: 4H-SiC has excellent physical and chemical properties such as wide band gap and high electron mobility and can be used in microwave and radio frequency devices. Epitaxial layer on semi-insulating (SI) substrate of 4H-SiC is a key structure for the fabrication of radio frequency devices. However, two-dimensional growth easily occurs during the epitaxy process to form 3C-SiC. Therefore, it is necessary to study the crystal polytype change in the epitaxial layer. This paper studied the effect of temperature on the epitaxial layer during epitaxy on 4H-SiC SI substrates using trichlorosilane and ethylene as source gases. The Si-face and the C-face were respectively selected as the growth planes, and the temperature varied in the range of 1400 degrees C-1600 degrees C. The samples were characterized using optical microscopy, atomic force microscopy, and Raman spectroscopy. The surface topog-raphy obtained by epitaxial growth was uniform, and the surface roughness of the smooth region was less than 1.0 nm. 3C-SiC was obtained at low temperature, and 4H-SiC was obtained at higher temperature.

Accession Number: WOS:000919105400001

ISSN: 0022-0248

eISSN: 1873-5002

Full Text: https://www.sciencedirect.com/science/article/pii/S0022024822004900?via%3Dihub