A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Evaluation and bioparticle density correlation analysis of extended gate HEMT sensors for biological detection from microscopic view

2023-02-10

 

Author(s): Cui, N (Cui, Ning); Xu, MK (Xu, Mengke); Guan, M (Guan, Min); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Zhang, Y (Zhang, Yang)

Source: APPLIED PHYSICS EXPRESS Volume: 16 Issue: 1 Article Number: 017002 DOI: 10.35848/1882-0786/acb12c Published: JAN 1 2023

Abstract: In this letter, we focus on the relationship between modification bioparticle density (N) and biological regulation ability in extended gate HEMT (EG-HEMT) biosensors. By analyzing, we demonstrate that under the same gate electrodes size (S (g)) and concentration, N is exponentially related to the area of sensing regions (y) and has fixed exponential magnification -0.65 +/- 0.05. This formula had been demonstrated to have perfect universality when testing protein and small molecules. Finally, we apply N to the structural design of EG-HEMT biosensors and projected that 10 y structure has both high biological regulation ability of biosensors and efficient utility of chips.

Accession Number: WOS:000915687100001

ISSN: 1882-0778

eISSN: 1882-0786

Full Text: https://iopscience.iop.org/article/10.35848/1882-0786/acb12c



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明