Author(s): Chen, ZY (Chen, Zhenyu); Liang, F (Liang, Feng); Zhao, DG (Zhao, Degang); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Jiang, DS (Jiang, Desheng)

Source: CRYSTALS Volume: 13 Issue: 1 Article Number: 127 DOI: 10.3390/cryst13010127 Published: JAN 2023

Abstract: In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak characteristics were observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes in InGaN layers and in the appearance of composite structures of InGaN/GaN quantum wells and quantum-dot-like centers. It was shown that these changes are caused by several effects induced by ammonia, including both the promotion of indium corporation and corrosion from hydrogen caused by the decomposition of ammonia, as well as the decrease in the surface energy of InGaN dot-like centers. We carried out detailed research to determine ammonia's mechanism of action during InGaN layer growth.

Accession Number: WOS:000916928800001

eISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/13/1/127