Author(s): Song, WR (Song, Wurui); Chen, Q (Chen, Qi); Yang, KL (Yang, Kailai); Liang, M (Liang, Meng); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Liu, ZQ (Liu, Zhiqiang)

Source: ADVANCED FUNCTIONAL MATERIALS DOI: 10.1002/adfm.202209880 Early Access Date: JAN 2023

Abstract: Group III-nitrides have attracted significant attention in recent years for their wide tunable band-gaps and excellent optoelectronic capabilities, which are advantageous for several applications including light-emitting diodes, lasers, photodetectors, and large-size low-cost power electronic devices. However, conventional epitaxy accompanied by the covalent bond formation renders the transfer of nitride epilayers difficult, thereby limiting the application potential of nitrides in wearable and flexible electronics. Furthermore, interfacial covalent bonds also limit substrate selection and hinder the development of heterogeneous integration between nitrides and other material systems. 2D materials can mitigate these problems significantly. On the one hand, due to the weak van der Waals forces between the layers of 2D materials, influences of lattice mismatch can be avoided to improve crystal quality. On the other hand, delamination and transfer of nitride epilayers can be achieved easily. Therefore, this study focuses on providing comprehensive guidelines regarding the exfoliation of epitaxial layers using 2D materials to provide new design freedoms for nitride devices. Different 2D buffers and release layers have also been discussed. Furthermore, the limitations, promising solutions, future directions, and applicability of this strategy to flexible nitride devices are presented.

Accession Number: WOS:000913024700001

ISSN: 1616-301X

eISSN: 1616-3028

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/adfm.202209880