Author(s): Jia, QX (Jia, Qingxuan); Gloter, A (Gloter, Alexandre)

Source: ADVANCED MATERIALS INTERFACES DOI: 10.1002/admi.202202165 Early Access Date: DEC 2022

Abstract: Electric field reconstruction at interfaces plays a crucial role in device performances controlling, for example, Schottky potential barrier and interfacial Rashba effect. Here, scanning transmission electron microscopy (STEM) and ab-initio calculation are used to estimate the atomic-scale and large-scale potential reconstruction at the interface between a metallic oxide SrRuO3 (SRO) thin film and an insulating DyScO3 (DSO) substrate. The intensity and the symmetry of the large-scale electrostatic reconstruction at the interface is probed by 4D-STEM discussing the center-of-mass shift for different angular ranges detection. Numerical simulations indicate that thermal diffuse scattered (TDS) electrons can be sensitive to large-scale electric field and experiments based on these diffused electrons near the interface confirm that the electric field extends more in the insulating DyScO3 (DSO) side. The magnitude of the electrostatic drop at the interface estimated by the 4D-STEM experiment is in accordance with the ab-initio values for a p-type reconstruction of the interface plane. Furthermore, an atomically resolved TDS potential asymmetry is observed in real-space at the SRO/DSO interface by 4D-STEM. This asymmetry is associated with the formation of a local ferroelectric type dipole at the interfacial unit-cell revealing unambiguously the balance evolution between antiferrodistortive and ferroelectric instabilities at the interface between a metallic SRO and an insulating DSO.

Accession Number: WOS:000899376100001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Gloter, Alexandre                  0000-0002-4813-3799

ISSN: 2196-7350

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/admi.202202165