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Narrow-Linewidth Semiconductor Laser With High-Order Sidewall Gratings

2023-01-13

 

Author(s): Xu, YB (Xu, Yuanbo); Wang, MJ (Wang, Mingjin); Qu, HW (Qu, Hongwei); Liu, WZ (Liu, Wenzhen); Fu, T (Fu, Ting); Li, J (Li, Jing); Du, FL (Du, Fangling); Zheng, WH (Zheng, Wanhua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 35 Issue: 2 Pages: 85-88 DOI: 10.1109/LPT.2022.3222761 Published: JAN 15 2023

Abstract: We demonstrate a kind of ridge waveguide semiconductor laser with high-order sidewall gratings around 1550 nm. The ridge waveguide with 11th-order sidewall gratings is fabricated by the standard contact-types i -line lithography. The fabricated device shows an output power of 44 mW at a bias current of 500 mA and a stable single-mode operation over wide ranges of current and temperature conditions. A high side-mode suppression ratio (similar to 59 dB), a narrow linewidth of 63 kHz and a low relative intensity noise (< -150 dB/Hz under the frequency range from 0.03 to 20 GHz) have been demonstrated at 25 degrees C .

Accession Number: WOS:000894964600007

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Fu, Ting                  0000-0001-9716-2660

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9962796



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