Author(s): Liu, KW (Liu, Kewei); Yao, SY (Yao, Shunyu); Ding, YL (Ding, Yulei); Wang, ZH (Wang, Zihao); Guo, YA (Guo, Yanan); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Yang, CX (Yang, Changxi); Bao, CY (Bao, Chengying)

Source: OPTICS LETTERS Volume: 47 Issue: 17 Pages: 4295-4298 DOI: 10.1364/OL.466195 Published: SEP 1 2022

Abstract: Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (highQ) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived. (c) 2022 Optica Publishing Group

Accession Number: WOS:000899611100005

PubMed ID: 36048637

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Bao, Chengying                  0000-0002-9991-6398

Yang, Changxi                  0000-0002-9972-6965

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-17-4295&id=492339