Author(s): Li, MM (Li, Mingming); Zheng, J (Zheng, Jun); Liu, XQ (Liu, Xiangquan); Niu, CQ (Niu, Chaoqun); Zhu, YP (Zhu, Yupeng); Pang, YQ (Pang, Yaqing); Liu, Z (Liu, Zhi); Yang, YZ (Yang, Yazhou); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: OPTICS LETTERS Volume: 47 Issue: 17 Pages: 4315-4318 DOI: 10.1364/OL.469027 Published: SEP 1 2022

Abstract: In this work, GeSn resonant cavity enhanced (RCE) p-i-n photodetectors (PDs) with 3.7% Sn content in a GeSn layer were fabricated on a silicon on insulator (SOI) substrate. The gold (Au) layer and the deposited SiO2 layer constitute the bottom reflector and top reflector of the RCE detectors, respectively. The GeSn RCE PD has three resonant peaks and its responsivity is improved about 4.5 times at 1630 nm, compared with GeSn PDs without a gold bottom mirror. The cutoff wavelength of GeSn RCE PDs is up to 1820 nm, while it is only 1730 nm for GeSn PDs without a gold reflector. The responsivity of RCE PDs at 1630nm reaches 0.126 A/W and 3-dB bandwidth at about 36 GHz is achieved. These results indicate that the RCE structure is an effective approach for enhancing the GeSn PD performance operated at the L band. (c) 2022 Optica Publishing Group

Accession Number: WOS:000899611100010

PubMed ID: 36048642

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-17-4315&id=492836