Author(s): Wang, XY (Wang, Xiaoye); Bai, X (Bai, Xue); Yang, XG (Yang, Xiaoguang); Du, WN (Du, Wenna); Yang, T (Yang, Tao)

Source: VACUUM Volume: 208 Article Number: 111665 DOI: 10.1016/j.vacuum.2022.111665 Early Access Date: DEC 2022 Published: FEB 2023

Abstract: Traditional view on the growth mechanism of InAs nanowires (NWs) arrays in selective-area growth (SAG) holds that the growth of InAs NWs is based on the catalyst-free mechanism of faceting growth dominantly. Here, based on analyses and comparisons between the InAs NWs in unselective-area growth (USAG) on bare Si substrates and the InAs NWs arrays in SAG, we put forwards a new point of view that the growth mechanism of InAs NWs arrays in SAG is self-catalyzed vapor-liquid-solid (VLS) mechanism. By designing interrupted growth of InAs NWs in SAG and growth of InAs/GaSb heterostructured NWs in SAG, traces of In droplets were found during SAG of InAs NWs, which directly demonstrate self-catalyzed VLS growth mechanism for the InAs NWs arrays in SAG.

Accession Number: WOS:000899024600001

ISSN: 0042-207X

eISSN: 1879-2715

Full Text: https://www.sciencedirect.com/science/article/pii/S0042207X22007874?via%3Dihub