Author(s): Zhu, WK (Zhu, Wenkai); Xie, SH (Xie, Shihong); Lin, HL (Lin, Hailong); Zhang, GJ (Zhang, Gaojie); Wu, H (Wu, Hao); Hu, TG (Hu, Tiangui); Wang, Z (Wang, Ziao); Zhang, XM (Zhang, Xiaomin); Xu, JH (Xu, Jiahan); Wang, YJ (Wang, Yujing); Zheng, YH (Zheng, Yuanhui); Yan, FG (Yan, Faguang); Zhang, J (Zhang, Jing); Zhao, LX (Zhao, Lixia); Patane, A (Patane, Amalia); Zhang, J (Zhang, Jia); Chang, HX (Chang, Haixin); Wang, KY (Wang, Kaiyou)

Source: CHINESE PHYSICS LETTERS Volume: 39 Issue: 12 Article Number: 128501 DOI: 10.1088/0256-307X/39/12/128501 Published: NOV 1 2022

Abstract: A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature (T = 300 K) in vdW MTJs based on a thin (< 10 nm) semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at T = 10 K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.

Accession Number: WOS:000890238500001

ISSN: 0256-307X

eISSN: 1741-3540

Full Text: https://iopscience.iop.org/article/10.1088/0256-307X/39/12/128501